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Conference on Material Science and Material Properties for Infrared Optoelectronics

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1.Thermodynamic aspects of manufacturing of (HgMn)Te/CdTe structures

机译：制造（HGMN）TE / CDTE结构的热力学方面
- 作者：S.V. Kavertsev;S.M. Komirenko;L.V. Rashkovetskii;Alexander E. Belyaev
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
2.Investigations of transport phenomena in narrow-gap semiconductors

机译：窄间隙半导体中运输现象的研究
- 作者：G.V. Lashkarev;M.V. Radchenko;V.V. Asotskiy;V.M. Frasunyak
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
3.Influence of growth conditions on electrophysical properties of HgMnTe/CdZnTe heterostructures

机译：生长条件对HGMNTE / CDZNTE异质结构电神法性质的影响
- 作者：Alexander E. Belyaev;S.A. Vitusevich;S.M. Komirenko
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
4.Peculiarities of radiative recombination in Vanadium-doped CdTe crystals

机译：钒掺杂CdTe晶体中辐射重组的特性
- 作者：Alexander E. Belyaev;V.Y. Ivanov;S.M. Komirenko;S.V. Kavertsev;L.A. Mischenko
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
5.Influence of laser irradiation on Hg1-xMnxTe photoelectrical properties

机译：激光辐射对HG1-XMNXTE光电性能的影响
- 作者：Elena P. Kopishinskaya;P.E. Mozol;I.M. Rarenko;Oleksandr I. Vlasenko
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
6.Influence of the depolarization effect and the nonparabolicity on the second-harmonic generation spectrum in doubly resonant asymmetric quantum well systems

机译：去极化效应的影响与非分解性对双谐振不对称量子井系统中的二次谐波产生光谱
- 作者：M.Zaluzny;Vladimir V. Bondarenko
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
7.Growth and properties of native oxides for IV-VI optoelectronic devices

机译：IV-VI光电器件天然氧化物的生长和性能
- 作者：N.N. Berchenko;A.I. Vinnikova;A.Y. Nikiforov;E.A. Tretyakova;S.V. Fadyeev
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
8.Electronic component design and testing for multielement IR arrays with CCD readout devices

机译：具有CCD读数器件的多元素IR阵列的电子元件设计和测试
- 作者：Sergey D. Darchuk;Y.P. Derkach;Y.G. Kononenko;V.P. Reva;Fiodor F. Sizov;Vladimir V. Tetyorkin
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
9.Photoconductivity of a semiconductor with transverse gradient of electric field

机译：具有电场横向梯度的半导体的光电导性
- 作者：Arthur Medvid
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
10.Galvanomagnetic and photoelectric properties of electron-irradiated PbTe(Ga)

机译：电子照射PBTE（GA）的镀锌磁性和光电性能
- 作者：E.P. Skipetrov;A.N. Nekrasova;L.A. Skipetrova;L.I. Ryabova
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
11.Magnetic field-induced prolonged changes of electric parameters of infrared MOS-photodetectors

机译：磁场诱导的红外MOS - 光电探测器的电气参数的延长变化
- 作者：A.V. Voitsekhovskii;V.N. Davydov;S.N. Nesmelov
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
12.Laser molecular beam epitaxy of BaTiO3 thin films

机译：激光分子束外延的BATIO3薄膜
- 作者：Dafu Cui;Hui-sheng Wang;K.Ma;Zheng-Hao Chen;Yue-liang Zhou;Huibin Lu;L.Li;Guozhen Yang
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
13.PbSnSe-on-Si: material and IR-device properties

机译：PBSNSE-ON-SI：材料和IR-Device Properties
- 作者：Hans Zogg;Alexander Fach;Joachim John;Peter Mueller;Carmine Paglino;A.N. Tiwari
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
14.Nonlinear optical transmission of Cd0.2Hg0.8Te single crystals at room temperature

机译：CD0.2HG0.8TE的非线性光学传输在室温下单晶
- 作者：A.G. Golenkov;Sergey D. Darchuk;Fiodor F. Sizov
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
15.Energy spectrum of irradiation-induced defects in Pb1-xSnxTe

机译：PB1-Xsnxte中辐照诱导缺陷的能谱
- 作者：E.P. Skipetrov;A.M. Mousalitin;A.N. Nekrasova;A.V. Ryazanov
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
16.Photoluminescence and Raman scattering in In0.53Ga0.47As/InP:Dy

机译：在0.53ga0.47as / inp中的光致发光和拉曼散射：dy
- 作者：Balint Podor;D.Vignaud;I.M. Tiginyanu;L.Csontos;V.V. Ursaki;V.P. Shontya
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
17.Calculations of photoelectric amplification coefficient in graded-band-gap photoresistors

机译：渐变带间隙光致阻敏电阻中光电放大系数的计算
- 作者：V.G. Savitsky;B.S. Sokolovsky;A.V. Nemolovsky
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
18.Investigation of MIS-structures on MnxHg1-xTe

机译：MNXHG1-XTE上的错误结构调查
- 作者：O.G. Lanskaya;E.P. Lilenko;A.V. Voitsekhovskii;V.I. Kalenik
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
19.Magnetoreflectance study of interfaces in Cd1-xMnxTe/CdTe/Cd1-xMnxTe structures

机译：CD1-XMNXTE / CDTE / CD1-XMNXTE结构中界面磁阻入学
- 作者：V.G. Abramishvili;A.V. Komarov;S.M. Ryabchenko;V.I. Sugakov;A.V. Vertsimakha
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
20.Nonparabolicity effect upon the electron mobility in PbTe/PbSnTe quantum wells

机译：在PBTE / PBSNTE量子阱中对电子迁移率的非共同逻辑
- 作者：Vladimir V. Bondarenko
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
21.Interaction of II-VI III-VI and IV-VI group semiconductors with metals

机译：II-VIII-VI和IV-VI组半导体与金属的相互作用
- 作者：V.N. Tomashik;V.I. Grytsiv;Z.F. Tomashik;O.V. Seritsan
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
22.Reflection spectrum of high-conductivity solid solutions

机译：高导率固溶体的反射谱
- 作者：Oleg V. Vakulenko;Vladislav M. Kravchenko;V.S. Stashhuk;O.P. Ghorodnichyj;V.A. Brodovyj;M.G. Vjalyj
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
23.Low-dimensional Si structures prepared by laser deposition

机译：通过激光沉积制备的低维Si结构
- 作者：Sergei V. Svechnikov;E.B. Kaganovich;E.G. Manoilov;S.P. Dikiy
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
24.New possibilities of Hall method for metastable centers investigation in acousto-optical crystals

机译：声光晶体亚稳中心调查霍尔方法的新可能性
- 作者：Yaroslav M. Olikh;Rada K. Savkina
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
25.Sensitivity of two-dimensional electron gas to far infrared radiation

机译：二维电子气到远红外辐射的敏感性
- 作者：Alexander I. Dmitriev;G.V. Lashkarev;Z.D. Kovalyuk
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
26.Kinetics of photoconductivity and metastable electronic states in Pb1-xMnxTe(In) solid solutions

机译：PB1-XMNXTE（IN）固溶体光电导性和亚稳态电子状态的动力学
- 作者：B.A. Akimov;A.V. Albul;S.V. Ponomarev;L.I. Ryabova
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
27.Nonlinear optical processes in the GaAs-GaP planar gradient waveguides: computer simulation

机译：GaAs-Gap平面梯度波导中的非线性光学过程：计算机仿真
- 作者：V.G. Voevodin;O.V. Leontieva
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
28.Light and electric field influence on resistivity and long-term relaxations of piezoresistivity in p-GaAs/Al0.5Ga0.5As heterostructures

机译：光线和电场对P-GaAs / Al0.5Ga0.5as异质结构中压阻性的电阻率和长期松弛的影响
- 作者：E.V. Bogdanov;Ole P. Hansen;K.I. Kolokolov;V.N. Kravchenko;N.Y. Minina;J.S. Olsen;A.M. Savin
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
29.Thermal conductivity of PbTe-MnTe solid solutions

机译：PBTE-MNTE固体溶液的热导率
- 作者：E.I. Rogacheva;I.M. Krivulkin
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
30.Percolation effects in Pb1-xGexTe solid solutions

机译：PB1-Xgexte固体溶液中的渗滤效应
- 作者：E.I. Rogacheva;V.I. Pinegin;T.V. Tavrina
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
31.Photoelectric peculiarities and theoretical analysis of properties of thin semiconductor PbS films prepared by new spray method

机译：新型喷涂法制备薄半导体PBS薄膜性能的光电特性及其性能分析
- 作者：Alexey N. Alyoshin;Alexander V. Burlak;Valeriy A. Pasternak;Alexander V. Tyurin
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
32.Quantum magnetotransport in 2D electron gas in InGaAs/InP heterostructures

机译：在Ingaas / InP异质结构中的2D电子气体Quantum Magnetransport
- 作者：Balint Podor;I.G. Savelev;Gy. Kovacs;G.Remenyi;G.Gombos;A.M. Kreshchuk;S.V. Novikov
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
33.Photovoltaic effect in graded-band-gap layers with intrinsic type of conductivity

机译：具有固有电导率的分级带间隙层的光伏作用
- 作者：B.S. Sokolovsky
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
34.Tunnel surface recombination in optoelectronic device modeling

机译：光电器件建模中的隧道表面复合
- 作者：Alexander A. Ptashchenko;Fedor A. Ptashchenko
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
35.p-to-n ion-beam milling conversion in specially doped CdxHg1-xTe

机译：P-TO-N专门掺杂CDXHG1-XTE中的离子束铣削转换
- 作者：Igor I. Izhnin;A.I. Izhnin;K.R. Kurbanov;B.B. Prytuljak
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
36.Multispectral photoelectric characteristics induced by metastable electronic states in PbTe(Ga)

机译：PBTE（GA）中亚铁电子态诱导的多光谱光电特性
- 作者：B.A. Akimov;A.V. Albul;S.V. Ponomarev;L.I. Ryabova
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
37.High-power pulse-electron beam modification and ion implantation of Hg1-xCdxTe epitaxial structures

机译：HG1-XCDXTE外延结构的高功率脉冲电子束改性和离子植入
- 作者：A.V. Voitsekhovskii;A.P. Kokhanenko;Yu. A. Denisov;D.A. Oucherenko;G.E. Remnev;M.S. Opekunov
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
38.Abnormal magnetic properties and high-temperature superconductivity of metal and semiconductor single crystals

机译：金属和半导体单晶的异常磁性和高温超导性
- 作者：A.V. Brodovoi;V.A. Brodovoi;V.G. Kolesnichenko;S.P. Kolesnik;L.M. Khnorozok;V.V. Skorokhod;S.M. Solonin
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
39.Thermodynamics of self-propagating high-temperature synthesis of ternary semiconductors

机译：三元半导体自蔓延高温合成的热力学
- 作者：V.G. Voevodin;O.V. Voevodina
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
40.Si-Te acoustooptic modulator for fiber optic gas sensor based on midwave InGaAsSb/InAsSbP diode laser

机译：基于Midwave Ingaassb / Inassbp二极管激光的光纤气体传感器Si-TE声光调制器
- 作者：L.A. Kulakova;Nonna V. Zotova;Sergey A. Karandashov;Boris A. Matveev;B.T. Melekh;Nikolai M. Stus;Georgii N. Talalakin;E. Z. Yakhkind
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
41.Deposition technique and external factors effect on Ge33As12Se55-Si heterostructure mechanical properties

机译：沉积技术和外部因素对GE33AS12Se55-Si异质结构机械性能的影响
- 作者：N.D. Savchenko;T.Shchurova;M.L. Trunov;A.Kondrat;V.Onopko
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
42.Liquid phase epitaxial III-V technology for photodetectors manufacturing

机译：光电探测器制造的液相外延III-V技术
- 作者：Evgenij F. Venger;Galina N. Semenova;Tatyana G. Kryshtab;P.M. Lytvyn;S.I. Krukovskii;R.Merker
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
43.Epitaxial structures based on narrow band-gap InAs1-x-ySbxBiy solid solutions

机译：基于窄带间隙的外延结构INAS1-X-YSBXBIY固溶体
- 作者：R.K. Akchurin;V.A. Zhegalin;T.V. Sakharova;S.V. Seregin
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
44.Irreversible gigantic modification of semiconductor optical properties

机译：半导体光学性质的不可逆巨大修改
- 作者：Alexander M. Kamuz;Pavel F. Oleksenko;T.A. Dyachenko
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
45.HTSC detectors

机译：HTSC探测器
- 作者：V.G. Efremenko
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
46.Ellipsometry and Raman spectroscopy of MBE-grown undoped Si-Si0.78Ge0.22/(001)Si superlattices

机译：Mbe-Growrown的椭圆形和拉曼光谱未常见的Si-Si0.78Ge0.22 /（001）Si超晶格
- 作者：O.A. Mironov;P.J. Phillips;E.H. Parker;M.Mironov;V.P. Gnezdilov;V.Ushakov;Vicktor V. Eremenko
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
47.Magnetopolaron effect in diluted semimagnetic semiconductors

机译：在稀释半磁半导体中的磁聚效应
- 作者：Georgiy G. Tarasov;Yuri I. Mazur;Andrey S. Rakitin;S.R. Lavoric;J.W. Tomm;W.Hoerstel
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
48.Photoelectric properties of Pb1-x-yGeySnxTe:In epitaxial films

机译：PB1-X-YGEYSNXTE的光电性能：在外延薄膜中
- 作者：V.F. Chishko;A.I. Dirotchka;I.L. Kasatkin;A.G. Moisseenko;V.V. Osipov;E.I. Slynko;V.N. Vasilkov
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
49.Correlation between crystal defects and properties of CdTe:Ge radiation detectors

机译：CDTE晶体缺陷与CDTE的特性相关性：GE辐射探测器
- 作者：P.Feichuk;L.Shcherbak;D.Pluta;P.Moravec;J.Franc;E.Belas;P.Hoschl
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
50.Intrinsic quantity of chaos in photodetecting

机译：光电探测中的内在数量
- 作者：Evgenij A. Salkov
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
51.Modification of defect structure and properties of CdxHg1-xTe semiconductors by laser pulses

机译：通过激光脉冲修改CDXHG1-XTE半导体的缺陷结构和性质
- 作者：V.A. Gnatyuk;P.E. Mozol;O.S. Gorodnychenko;V.V. Borshch
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
52.Laser pulse correcting 2D Pearson-IV ion-implanted impurity profiles near the oxidal defense mask boundary for creating matrix CdHgTe infrared detector

机译：激光脉冲校正2D Pearson-IV离子植入的杂质型材，靠近氧化防御掩模边界，用于产生矩阵CDHGTE红外探测器
- 作者：L.S. Monastyrsky;Yu. Sokyrka;O.Ivanel;I.Olenych;R.Kovtun
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
53.Novel photovoltaic and bicolor GaAs/AlGaAs quantum well infrared detector

机译：新型光伏和双色GaAs / Algaas量子孔红外探测器
- 作者：Zheng-Hao Chen;Zhenyu Yuan;Jianwei Ma;Dafu Cui
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
54.Peculiarities of detecting of radiation from small size radiators

机译：小尺寸散热器检测辐射的特性
- 作者：Evgenij A. Salkov;George S. Svechnikov;Nikolai M. Krolevets
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
55.Ge vapor-phase doping of CdTe and Cd0.96Zn0.04Te crystals

机译：CDTE和CD0.96ZN0.04TE晶体的GE气相掺杂
- 作者：P.Feichuk;L.Shcherbak;I.Omanchukivska
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
56.Dynamical aspects of carrier transport in quantum well intersubband photodetectors

机译：量子阱间隙光电探测器中载波运输的动态方面
- 作者：Harald Schneider;Stefan Ehret;G.Bihlmann;Gerhard Boehm
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
57.Injection-amplification IR-photodiodes

机译：注射扩增IR-光电二极管
- 作者：Shamil D. Kurmashev;Vitaly I. Stafeev;I.Vikulin;Alexandr N. Sofronkov
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
58.Determination of diffusion lengths of minority carriers in Hg1-xCdxTe (x~0.2 to 0.3) by EBIC method

机译：通过EBIC方法测定Hg1-XCDxte（X〜0.2至0.3）中少数载体的扩散长度
- 作者：J.Franc;E.Belas;R.Grill;A.Toth;Helmut Sitter;P.Moravec;P.Hoeschl
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
59.Recent progress in the study of characterization and properties of HgCdTe at the National Laboratory for Infrared Physics in China

机译：中国国家红外物理实验室催险特征研究及性能研究进展
- 作者：Junhao Chu;Kun Liu;Young Chang;Pu L. Liu;Biao Li;Shaoling Guo;Minghui Chen;Dingyuan Tang
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
60.Band structure engineering of InAs for improved electron transport characteristics

机译：用于改进电子传输特性的INA的带结构工程
- 作者：W.T. Masselink
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
61.Interconsistent band structure of narrow-gap Hg1-xCdxTe alloys obtained with consideration of far-band influence

机译：考虑到远带影响获得的窄间隙HG1-XCDXTE合金的相互矛盾带结构
- 作者：V.Bogoboyashchiy
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
62.Performance of HgCdTe InGaAs and quantum well GaAs/AlGaAs staring infrared focal plane arrays

机译：HGCDTE IngaAs和量子阱GaAs / Algaas凝视红外焦平面阵列的性能
- 作者：Lester J. Kozlowski;Kadri Vural;Jose M. Arias;William E. Tennant;Roger E. DeWames
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
63.Infrared thermal detectors versus photon detectors: I. Pixel performance

机译：红外热探测器与光子探测器：I.像素性能
- 作者：Antoni Rogalski
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
64.Narrow-gap alloys (PbSr)Se and (PbEu)Se for optoelectronic devices

机译：光电器件的窄间隙合金（PBSR）SE和（PBEU）SE
- 作者：Klaus H. Herrmann
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年
65.Review on the diffusion of Hg in CdTe

机译：CDTE中HG扩散的回顾
- 作者：E.D. Jones;M.U. Ahmed
- 会议名称：《Conference on Material Science and Material Properties for Infrared Optoelectronics》 | 1997年