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Magnetoreflectance study of interfaces in Cd1-xMnxTe/CdTe/Cd1-xMnxTe structures

机译:CD1-XMNXTE / CDTE / CD1-XMNXTE结构中界面磁阻入学

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Magneto-reflectivity spectra are studied to determine giant spin splitting (GSS) of the excitonic transitions in a set of quantum wells Cd$-1$MIN@x$/Mn$-x$/Te/CdTe/Cd$- 1$MIN@x$/Mn$-x$/Te of different widths. Paramagnetic enhancement of the excitonic state GSS in the quantum wells is observed. Corrections to the GSS in the quantum well due to both a) reduction of the number of nearest neighboring magnetic ions with strong antiferromagnetic coupling at the CdTe/Cd$-1$MIN@x$/Mn$-x$/Te interfaces and b) mixing of materials of CdTe and Cd$-1$MIN@x$/Te in the interface region are calculated. It is shown that relative role of the paramagnetic enhancement increases as the quantum well width rises. It is noted that paramagnetic enhancement results from the weakening of two factors of the antiferromagnetic Mn-Mn coupling in the semicmagnetic semiconductors which usually tend to decrease GSS. Those factors are excluding of the part of magnetic ions contribution to the magnetization due to the antiferromagnetic coupling and account for the effective temperature of the magnetic ion subsystem.
机译:研究了磁反射率光谱,以确定一组Quantum Wells CD $ -1 $ min @ x $ / mn $ -x $ / te / cdte / cd $ - 1 $ min中的巨型转型的巨型旋转分裂(GSS) @ x $ / mn $ -x $ / te不同宽度。观察到量子阱中的激发态GSS的顺磁性增强。由于a)校正量子井中的GSS良好的差异彼此的最近相邻磁离子的数量,在CDTE / CD $ -1 $ min @ x $ / Mn $ -x $ / te接口和b计算CDTE和CD $ -1 $ min @ x $ / te的混合的混合。结果表明,随着量子阱宽度升高,所述顺磁性增强的相对作用增加。应注意,顺磁性增强导致半磁性半导体中的反铁磁MN-MN-MN耦合的两个因素的弱化产生,这通常倾向于减少GSS。这些因素由于反铁磁耦合而不是磁离子子系统的有效温度而导致的磁离子对磁化的贡献的贡献。

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