The application of porous-Si micromachining technology in the calorimetric sensor

摘要

Using porous silicon as a sacrificial layer with a large distance from the structure to the substrate, the porous -Si micromachining is a new generation surface micromachining technology. A sketch of the special self-made 3-cavity electrochemical device used for anodisation and a detailed description of the porous film formation parameters were given in this paper. Anodisation is performed with current density 40 mA/cm{sup}2 for 60 minutes . Formation parameters and amounts of several major impurities of porous-Si layer are studied. The porous-Si layer was removed in 1% KOH and then the flow channel with depth of 50 μm was formed . A 0.2 μm Ni-Cr thin film was deposited and patterned on the Si{sub}3N{sub}4+ poly-Si microbridge as a thermistor. The analysis model was introduced and met quite well with the experiment The results of the fast response (<10ms) and low power dissipation (in mw)are reported in this paper.