Low-Voltage Organic Field-Effect Transistors Photonic Memory with Solution-Processed Blocking Dielectric Layer and Photosensitive Charge Trapping Layer

摘要

Organic field-effect transistor (OFET) photonic memories have attracted significant attention due to their special memory mechanism and potential application, such as image capture and light information storage. Conventional OFET memories based on SiO_2 blocking dielectric layer usually need a high programming and erasing voltage, which is not conducive to the needs for future market applications. Here, the low-voltage OFET photonic memory is investigated by using spin-coated organic polymer as the blocking dielectric layer and blending film of CsPbBr_3 quantum dots (QDs) and polystyrene (PS) as the charge trapping layer, respectively. The thin poly(methyl methacrylate) (PMMA) film is used as the first blocking dielectric layer, and the ultrathin polyvinyl alcohol (PVA) film is used as secondary blocking dielectric layer on the top of PMMA. Due to the use of thin polymer blocking dielectric layers, the operating voltages of the photonic memory can be as low as 5 V. And the photo-generated carriers can be effectively trapped and released in photosensitive charge trapping layer during the photo-programming and electrical erasing operations. In addition, the memory characteristics of the photonic memory are comparable to that of traditional memories with SiO_2 blocking dielectric layer. Multi-level data storage can be obtained in the memory by applying different photo-programming conditions. The low-voltage OFET memory device also presents well retention and endurance. Hence, the low-voltage OFET photonic memory using solution-processed polymer blocking dielectric and photosensitive charge trapping layer shows great potential for the application in optoelectronic devices in terms of large-area and low cost.