40 V to 100 V NLDMOS built on thin BOX SOI with high energy capability, state of the art Rdson/BVdss and robust performance

摘要

We report in this paper for the first time that power LDMOS transistors integrated in thin BOX SOI can achieve high energy capabilities comparable to bulk BCD technologies and almost identical breakdown voltages for both high and low side applications. With proper top silicon thickness consideration, NLDMOS transistors for a voltage range from 40V to 100V with state of the art Rdson/BVdss trade-off and robust device performance are successfully constructed via a simple design concept.