Enhanced breakdown voltage and low inductance of All-SiC module

摘要

SiC devices are expected to be used in fields that require in high voltage fields from 3kV to 10kV such as railways, and high reliability such as hybrid vehicles and electric vehicles. And it is also expected to realize high current to expand the application range. This paper presents the packaging technologies for enhanced breakdown voltage and low inductance corresponding to high current of All-SiC modules.