Direct atomic layer deposited Gd2O3 on grapheme and effects of rapid thermal annealing on its property

摘要

Atomic layer deposition (ALD) has been accepted as one of the optimal methods for dielectrics growth but it is challenging for ALD to deposit dielectrics on graphene due to its chemically inert property. In this work, Gd2O3 fdms were grown on graphene directly by atomic layer deposition with assistant of pre-H20 water treatment. In addition, we investigated the effects of rapid thermal annealing (RTA) on microstructure, optical and electrical properties of Gd2O3 films on graphene. Raman spectroscopy showed no defects were introduced into graphene during the ALD or RTA processes. The adhesion of Gd2O3 films on graphene was enhanced and the crystalline of Gd2O3 was improved. In addition, the relative permittivity of Gd2O3 on graphene is 14.5 and its EOT can be down to 5.4 nm. This technique may expand the application of graphene in microelectronic devices.