Fabrication of Slanted Nanostructures Using a Faraday Cage System

摘要

Slanted Cu nanostructures on a Si substrate were fabricated using a slanted channel template. The slanted plasma etching using a Faraday cage was employed for the formation of the template of slanted channel structures. The angle of the Si channel structures was controlled because ions entering the Faraday cage maintained their directions. After the slanted Si channel structures were formed, electroless plating was used to fill the slanted hole structures with Cu. Then, CMP and wet etching were used to remove the residual Cu layers and poly Si templates, respectively. The slanted Cu nanostructures with a good uniformity were successfully fabricated. The fabrication method presented in this work has advantages for obtaining uniformly arrayed slanted nanostructures under practical plasma processing conditions.