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NAND FLASH based three-tier fault-tolerant storage strategy

机译:NAND基于三层容错的存储策略

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摘要

This paper proposes a NAND FLASH based three-tier fault-tolerant storage strategy. Based on the hardware properties of NAND FLASH, the strategy is to add corresponding strategies according to different levels, to improve the fault tolerance capacity of NAND FLASH effectively, and to provide higher security for the stored data. Designed with experimental analysis under the condition of high demand for data security in this paper, it can be seen that the strategy can provide higher fault tolerance capacity.
机译:本文提出了基于NAND Flash的三层容错存储策略。基于NAND Flash的硬件属性,策略是根据不同级别添加相应的策略,以有效地提高NAND闪存的容错能力,并为存储的数据提供更高的安全性。在本文中的数据安全性的高需求条件下设计了实验分析,可以看出该策略可以提供更高的容错能力。

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