首页> 外文会议>European Conference on Chemical Vapour Deposition >Thin film optical coatings of Vanadium Oxide and mixed Tungsten/Vanadium Oxide deposited by APCVD employing precursors of Vanadyl Acetylacetonate and a mixture with tungsten hexacarbonyl
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Thin film optical coatings of Vanadium Oxide and mixed Tungsten/Vanadium Oxide deposited by APCVD employing precursors of Vanadyl Acetylacetonate and a mixture with tungsten hexacarbonyl

机译:薄膜光学涂层氧化钒和混合钨/钒涂覆通过APCVD沉积的乙酰丙酮烷基丙酯的前体和六烷羰基的混合物

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Thin films of transition metals oxides are studied and comparison is made for two types of mixed precursors, first containing only hexaca?bonyls, and second containing tungsten hexacarbonyl and vanadyl acetylacetonate (Vanadium (III) acetylacetonate). The best electrochromic material is WO_3, although when deposited by Atmospheric Pressure Chemical Vapour Deposition (APCVD) films of WO_3 grow very slowly. In production stage, the growth-rate is very important factor for assuring a flo?-throough process. Our previous investigations showed that addition of a small fraction of lower temperature precursor such as Mo(CO)_6, or V(CO)_6, to the basic precursor of W(CO)_6 result in higher growth rate of films. Our recent studies on mixed W_xV_(1-x)O_3 showed excellent substrate coverage and high growth-rate. V(CO)_6 is a lower thermally stable precursor that allows the first nuclei-islands to be formed òn the hot substrates which further facilitate the tungsten oxide film deposition. However V(CO)_6 is much too expensive for large-scale production, thus we adopted another compound as precursor - vanadium acetylacetonate, expecting eventual growth-rate increase. The paper describes optical properties of films of vanadium oxide grown in result' of utilizing the acetylacetonate. Besides, the paper describes oür attempt to deposit mixed films of tungsten/vanadium using a mixed precursor of vanadyl acetylacetonate and tungsten hexacarbonyl. To our knowledge this is a new mixed precursor based on largely used single precursors namely W(CO)_6 and Vanadium acetylacetonate. Efforts were needed to adjust the mixed precursor ratio, keeping in mind the vapour pressures of the two chemicals at the deposition temperatures used. The paper presents the results for the visible transmittance and the film material modulation properties, studied by FTIR and Raman spectra. The dependence of the films optical behavior on APCVD process parameters, substrate temperatures, vapour source temperature and post deposition annealing is presented.
机译:研究过渡金属氧化物的薄膜,并对两种类型的混合前体进行比较,首先仅含六酰基·苯基,第二种含六烷基萘基和乙酰丙酮(钒丙基乙酰丙酮)。最好的电致变色材料是WO_3,尽管当通过大气压化学气相沉积(APCVD)WO_3薄膜生长非常缓慢。在生产阶段,生长速率是确保浮动方法的非常重要的因素。我们以前的研究表明,向W(CO)_6的基本前体(CO)_6的基本前体(CO)_6的基本前体增加了较低的较低温度前体的一小部分。我们最近关于混合W_XV_(1-X)O_3的研究显示出优异的基材覆盖率和高生长速率。 V(CO)_6是允许形成的第一核岛的较低的热稳定前体,其进一步促进氧化钨膜沉积的热基材。然而,V(CO)_6对于大规模生产来说太昂贵了,因此我们采用另一种化合物作为前体 - 乙酰丙酮钒,期望最终的生长率增加。本文描述了在利用乙酰丙酮的结果中生长的氧化钒膜的光学性质。此外,本文描述了Oür试图使用乙酰丙酮酸盐和钨六丙基羰基的混合前体沉积钨/钒的混合膜。据我们所知,这是一种基于大量使用的单一前体的新的混合前体,即W(CO)_6和乙酰丙酮钒。需要努力来调节混合前体比,牢记在所用沉积温度下两种化学物质的蒸汽压力。本文提出了由FTIR和拉曼光谱研究的可见光透射率和薄膜材料调制特性的结果。介绍了膜光学行为对APCVD工艺参数,衬底温度,蒸汽源温度和后沉积退火的依赖性。

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