This paper presents some of the recent experimental work on developing AlN ultrasonic transducers for high temperature NDT applications. C-axis oriented AlN films were grown on stainless steel SS316 substrate by RF sputtering deposition. High temperature performance and durability of the transducer were examined by pulse-echo experiments after heating to different temperatures. It can be shown that the sputtered AlN film transducer is capable of highly stable and durable performance at 400 °C or above with appropriate choice of substrate, buffer layer, electroding materials, and electroding approaches. Experimental evidences also indicated that transducers made of sputtered AlN film and molybdenum buffer layer on stainless steel substrate could potentially operate up to 800 °C.
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机译：本文介绍了最近开发ALN超声换能器的最新试验工作，用于高温NDT应用。通过RF溅射沉积在不锈钢SS316基板上生长C轴取向的AlN薄膜。通过加热到不同温度后，通过脉冲回波实验检查换能器的高温性能和耐久性。 It can be shown that the sputtered AlN film transducer is capable of highly stable and durable performance at 400 °C or above with appropriate choice of substrate, buffer layer, electroding materials, and electroding approaches.实验证据还表明，在不锈钢基材上由溅射的AlN膜和钼缓冲层制成的传感器可能潜在的操作高达800℃。
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