Bolometer at semiconductor-metal phase transition in VO2 thin films

摘要

A double ion beam sputtering deposition method was used for fabricating bolometric structure based on poly-crystalline VO2 film. A sensitivity of bolometric structure to infrared (IR) radiation at semiconductor-metal phase transition (SMPT) was observed. It has been established that temperature coefficient of resistance (TCR) in phase transition region is 10 times higher of such value at room temperature and resistance of bolometric structure is 25 times lower.