Mehod and Apparatus for inducing phase transition in a thin film of transition metal dichalcogenide

摘要

The present invention relates to a method and apparatus for phase transition of a TMD thin film, comprising: forming a TMD thin film containing either selenium (Se) or tellurium (Te) on a substrate; Generating a plasma at a pressure between 10 mTorr and 100 mTorr; And impinging acceleration ions on the TMD thin film from the plasma, wherein energy of the accelerating ions is higher than phase transition energy of the TMD thin film.