Electrical properties of MIS-structures and Schottky barriers of Si/GaAs (001) interface

摘要

Parameters of Schottky barrier diodes (SBD), such as the ideality factor (n), series resistance (Rs) and the effective barrier height (ϕBn), were obtained from I-V and C-V measurements of Al/Si/GaAs and Al/GaAs heterostructures at room temperature. For SBD with a Si interlayer grown by molecule beam epitaxy the following parameters were found: n = 1.29, ϕI-V = 0.74eV and Rs = 120Ω as compared to the sample without interlayer (1.7–7.5, 0.8eV and 500Ω, respectively). The electronic properties of Si/GaAs(001) interface were determined from C-V and G-V measurements of Al/SiO2/GaAs (001) MIS structure. It is shown that formation of Si/GaAs(001) interface allows reducing the density of surface states to ∼(1–5)·1011 cm−2 eV−1 for Au/SiO2/GaAs (001) MIS structure.