Negative dispersion in #x03B3;-Mo2N/Si(100) films

摘要

Molybdenum nitride films γ-Mo2N/Si have been fabricated with reactive magnetron sputtering of metal target in (N2 + Ar) gas mixture. Phase composition of the films has been defined with RHEED. Refractive index and extinction coefficient of γ-Mo2N thin films have been evaluated with laser ellipsometry at λ = 632.8 and 488.0 nm. Negative dispersion has been found for refractive index of γ-Mo2N in visible spectral range. Upper limit of γ-Mo2N film thickness measurable with laser ellipsometry has been estimated to be ∼80 nm.