Gamma radiation response for SOI MOSFETs fabricated on DeleCut and Unibond wafers

摘要

The gamma radiation tolerance of silicon on insulator technology on Dele-Cut and Unibond materials was studied. The radiation response is characterized by threshold-voltage shifts of the back-gate n-channel SOI MOSFETs. The density of the effective positively charge accumulated in buried oxide after γ-irradiation at dose 1 Mrad was found to be 1.3·1012 cm−2 and 2.1·1012 cm−2 for Dele-Cut and Unibond wafers, respectively.