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Characterization of Detector Grade CdZnTe Material from Redlen Technologies

机译:来自Redlen Technologies的探测器级Cdznte材料的特征

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CdZnTe (or CZT) crystals can be used in a variety of detector-type applications. This large band gap material shows great promise for use as a gamma radiation spectrometer. Historically, the performance of CZT has typically been adversely affected by point defects, structural and compositional heterogeneities within the crystals, such as twinning, pipes, grain boundaries (polycrystallinity) and secondary phases (SP). The synthesis of CZT material has improved greatly with the primary performance limitation being attributed to mainly SP. In this presentation, we describe the extensive characterization of detector grade material that has been treated with post growth annealing to remove the SPs. Some of the analytical methods used in this study included polarized, cross polarized and transmission IR imaging, I-V curves measurements, synchrotron X-ray topography and electron microscopy.
机译:Cdznte(或CZT)晶体可用于各种检测器类型应用。这种大带隙材料显示出用作伽马辐射光谱仪的许多希望。历史上,CZT的性能通常受到晶体内的点缺陷,结构和组成异质性的不利影响,例如孪晶,管道,晶界(多晶硅)和二次相(SP)。 CZT材料的合成大大提高了主要性能限制,主要是SP。在本介绍中,我们描述了探测器级材料的广泛表征,该探测器级材料已经用后生长退火处理以去除SPS。本研究中使用的一些分析方法包括偏振,交叉极化和透射IR成像,I-V曲线测量,同步曲线X射线地形和电子显微镜。

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