Epitaxial Pb(Zr1-xTix)O3 [PZT] and (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 [PMN-PT] films, above 2 驴m in thickness, were grown on (100)cSrRuO3//(100)SrTiO3 substrates by metalorganic chemical vapor deposition (MOCVD). PbTiO3 content (x) dependencies of the crystal structure and piezoelectric properties were systematically investigated for these films. The longitudinal electric-field-induced strain 驴x33 and transverse piezoelectric coefficient e31f for PZT films were also maximum at the almost center mixed phase region, on the other hand, that for PMN-PT films were maximum at larger x edge of rhombohedral (pseudocubic) region. Almost the same order of 驴x33 was observed under applied electric fields up to 100 kV/cm, while larger e31f was observed in PMN-PT films compared with the case of PZT films. e31f coefficients of ~-8.9 C/m2 and ~ -11.0 C/m2 were calculated for the PZT film with x=0.46 and for the PMN-PT film with x=0.39, respectively.
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机译：外延PB（Zr 1-X / INF> TI X ）O 3 [PZT]和（1-X）PB（MG 1 / 3 NB 2/3 ）O 3 3 [PMN-PT]薄膜，厚度为2¼m，通过金属化学气相沉积（MOCVD），在（100） C //（100）SRTIO //（100）SRTIO 3 底板上。 PBTIO 3 晶体结构和压电性能的含量（X）依赖性被系统地研究了这些薄膜。纵向电场诱导的应变驴x 33 对于PZT薄膜的横向压电系数E 31F 在几乎中心的混合相位区域的最大值也是最大的，另一方面，对于PMN-PT薄膜的较大X边缘（假孔）区域的较大X边缘。在施加电场上观察到高达100kV / cm的施用电场几乎相同的顺序，而与情况相比，在PMN-PT膜中观察到较大的E 31F PZT薄膜。 E 31F 系数的〜-8.9 c / m 2 和〜-11.0 c / m 2 的pzt薄膜用x = 0.46计算对于具有x = 0.39的PMN-Pt膜。
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