The effect of barrier height variations in alloyed Al-Si Schottky barrier diodes on secondary electron contrast of doped semiconductors

摘要

The effect of heat treatment on the electrical behavior of aluminum on n-type silicon (Al/Si Schottky junctions) is used to study the effect of barrier height variation on secondary electron dopant contrast by annealing to 500°C. In this study, the variation of the Schottky barrier height has been detected as an increase of the contrast between Al on p~+ and Al on n-type Si doped regions. This increase is attributed to a decrease in the SE yield of the Al/n-type Si contact due to an increase in the Schottky barrier height after annealing.