Ultra shallow As profiling before and after spike annealing using medium energy ion scattering

机译：超浅作为刻划前后的刻划退火使用中等能量离子散射

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Ultra shallow arsenic profiles implanted into Si with an energy range from 0.5 to 3 keV to a dose of 8/spl times/10/sup 14/ ions/cm/sup 2/ before and after spike annealing were measured by medium energy ion scattering (MEIS) with a toroidal electrostatic analyzer (TEA). A shift of the peak of arsenic profile to the surface after spike annealing was observed by MEIS measurement. Most of the implanted arsenic atoms were trapped in the native oxide layer after spike annealing.

机译：通过中测量的能量离子散射测量植入0.5至3keV的能量范围为0.5至3keV的能量范围为8 / SPL时/ 10 / SOP 2 /之前和之后的能量范围为8 / SPL时间/ 10 / SOP 2 /之前和之后的能量范围。梅斯）带环形静电分析仪（茶）。通过MEIS测量观察到尖峰退火后砷曲线峰的峰值偏移。大多数植入的砷原子被捕获在尖刺退火后的天然氧化物层中。

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《International Workshop on Junction Technology》|2005年||共2页
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Abo S.; Ichihara S.; Lohner T.; Gyulai J.; Wakaya F.; Takai M.;
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正文语种
中图分类自动化技术、计算机技术;
关键词
annealing; arsenic; doping profiles; elemental semiconductors; ion-surface impact; silicon; 0.5 to 3 keV; MEIS spectra; Si:As; TEA; medium energy ion scattering spectra; spike annealing; toroidal electrostatic analyzer; ultra shallow arsenic profiles;

机译：退火;砷;元素半导体;离子表面冲击;硅;0.5至3 kev;梅斯光谱;Si：茶;中等能量离子散射光谱;尖峰静电分析仪;超浅砷谱;

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专利

1. Characterization of dopant profiles produced by ultra-shallow As implantation and spike annealing using medium energy ion scattering [J] . S. Ichihara, T. Nakagawa, M. Nitta, Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms . 2004,第Jun期

机译：使用中能离子散射通过超浅As注入和尖峰退火产生的掺杂剂分布特征
2. Dopant profiling of ultra shallow As implanted in Si with and without spike annealing using medium energy ion scattering [J] . Abo S, Ichihara S, Lohner T, Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms . 2005,第1a2期

机译：使用中能离子散射在有尖峰退火和无尖峰退火的情况下将超浅砷注入到硅中的掺杂分布
3. Analysis technique for ultra shallow junction using medium energy ion scattering time-of-flight elastic recoil detection analysis [J] . Abo Satoshi, Pei Ri, Yuan Yao Xin, Surface and Interface Analysis: SIA: An International Journal Devoted to the Development and Application of Techniques for the Analysis of Surfaces, Interfaces and Thin Films . 2014,第12a13期

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4. Ultra shallow As profiling before and after spike annealing using medium energy ion scattering [C] . Abo S., Ichihara S., Lohner T., Junction Technology, 2005. Extended Abstracts of the Fifth International Workshop on . 2005

机译：使用中能离子散射在尖峰退火前后的超浅As轮廓
5. Medium-energy ion scattering studies of interfaces in ultrathin oxide films. [D] . Feng, Tian. 2011

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7. High resolution medium energy ion scattering (MEIS) analysis for the quantitative depth profiling of ultra thin high-k layers [O] . Reading M, van den Berg JA, Zalm PC, 2010

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8. Quantitative Evaluations of the Effects of the Seabed Sediments on the Scattering and Propagation of Low to Medium Frequency Acoustic Energy in the Shallow Oceans. [R] . Yamamoto, T. 2002

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Ultra shallow As profiling before and after spike annealing using medium energy ion scattering

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