Homogeneity of Nitrogen and Phosphorus Co-implants in 4H-SiC: Full Wafer Scale Investigation

摘要

We report a full wafer scale investigation of the activation of nitrogen and phosphorus ions co-implanted at room temperature in a 4H-SiC semi-insulating wafer. We used a full 35 mm wafers on which, after implantation and annealing, 77 reticules with Hall bars and TLM motifs were processed. We found an average sheet resistance of 531 OMEGA/square with 30 OMEGA/square standard deviation.