Generation of coherent acoustic phonons in GaN-based p-n junction

摘要

Coherent acoustic phonons were generated in the piezoelectric bulk semiconductor through inverse piezoelectric effect by femtosecond laser pulses. While the photocarriers are generated in the depletion region of the piezoelectric semiconductor, the electrons and holes sweep in counter-directions due to the built-in electric field and result in strain pulses through the piezoelectric effect.