A silicon light emitting device is designed and simulated. It is fabricated in 0.6μm standard CMOS technology. The device can give more than 1μW optical power of visible light under reverse breakdown. The device can be turned on at a bias of 0.88V and work in a large range of voltage: 1.0-6.0V. The external electrical-optical conversion efficiency is more than 10{sup}(-6). The optical spectrum of the device is between 540-640nm, which have a clear peak near 580nm. The emission mechanism can be explained by a hot carrier direct recombination model.
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