Multiple dose He ion implantation into n-GaN for electrical isolation

摘要

In this work, Wurtzite GaN films were implanted with 15KeV, 55KeV and 150KeV He ion respectively with various doses at room temperature. One of the groups of samples were annealed at 750°C for 20 min before ion implantation. We found that the mobility increased and reduced corresponding to the low and high dose, respectively, by the measurements of double crystal X-Ray and Hall Effect.