Crystal Growth, Characterization and Anisotropic Electrical Properties of GaSe Single Crystals for THz Source and Radiation Detector Applications

摘要

The single crystal growth of large semi-insulating GaSe by the vertical Bridgman technique using zone-refined selenium (Se) and HP gallium (Ga) is described. The grown crystals (up to 10 cm long and 2.5 cm diameter) have been characterized thoroughly by X-ray diffraction (XRD), energy dispersive analysis by x-rays (EDAX), optical absorption/transmission, X-ray photoelectron spectroscopy (XPS), charge carrier electrical property measurements, second harmonic test, and radiation detection measurements.