Photosensitivity of heterostructure S_(1-x)Ge_x/Si with taking into account free carrier absorption of radiation and length of hot carriers energy path

摘要

With allowance for a diffusion motion of hot carriers after absorption IR radiation by the method of Green function a calculation of quantum efficiency and photosensitivity is carried out. The dependence of quantum efficiency and photosensitivity on thickness of the Si_(1-x)Ge_x layer, free-carrier absorption coefficient of IR radiation and inelastic mean free path of hot carriers is obtained both for forward and backside (through a substrate) illumination.