X-ray microdiffraction studies of InGaAsP selective-area growth layers

摘要

We have succeeded in developing two different X-ray microdiffraction methods to define optical devices with highly brilliant synchrotron radiation. In the first, we adopted perfect-crystal X-ray optics (successive asymmetric diffraction) and in the second, we used a phase zone plate to produce the X-ray microbeam. We used them to accurately measure the mask width dependence of strain change and lattice strain distribution in selective area growth layers.