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PULSED PLASMA DEPOSITION OF OXIDE HARD COATINGS

机译:氧化物硬涂层的脉冲等离子体沉积

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In the last years a variety of plasma sources have been developed for film deposition by magnetron sputtering. In addition to RF- and DC-sputter sources, pulsed plasma sources are gaining increased attention in sputter technology. This interest is driven by the wish of depositing coatings with superior properties as compared to those deposited by conventional techniques. One prominent example of coatings that are significantly enhanced by the usage of pulsed sputter deposition is alumina. Although crystalline α-alumina can be deposited by thermal CVD at temperatures above 1000 °C for two decades, no process for the deposition of crystalline alumina at low temperatures is commercially available up to now. In this paper, the results of a detailed study of the plasma parameters during bipolar pulsed magnetron sputtering and their effect on the properties of alumina hard coatings is reported. Langmuir type voltage measurements at the substrate position, optical emission spectroscopy as well as mass spectroscopy were used to monitor the effect of target poisoning on the reactive deposition of alumina. Those principal observations were connected to easily available process parameters like discharge voltage and oxygen partial pressure. Based on these measurements, the deposition of crystalline γ-alumina with high hardness and good adhesion under technical conditions was achieved.
机译:在过去几年中,已经开发了各种等离子体来源,用于通过磁控溅射膜沉积开发。除了RF-和DC-溅射源之外,脉冲等离子体源在溅射技术方面正在增加受关注。与常规技术沉积的人相比,这种兴趣由沉积具有优异性质的涂层的兴趣驱动。通过使用脉冲溅射沉积的使用明显增强的涂层的一个突出的实例是氧化铝。尽管在高于1000℃的温度下,可以通过热CVD沉积结晶α-氧化铝两十年来,但在低温下沉积结晶氧化铝的方法是商业上的。本文报道了双极脉冲磁控溅射期间的血浆参数详细研究的结果及其对氧化铝硬涂层性质的影响。 Langmuir型电压测量在基板位置,光发射光谱和质谱法用于监测目标中毒对氧化铝反应性沉积的影响。这些主要观察结果与放电电压和氧气分压等容易获得的工艺参数相连。基于这些测量,实现了在技术条件下具有高硬度和良好粘合性的结晶γ-氧化铝的沉积。

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