High-efficiency InP Based Multi-junction Solar Cells

摘要

In this work, we study a high efficient four-junction solar cells using A1AsSb(1.91eV), A1InAs(1.46eV), AlGaInAs(l.OeV) and InGaAs(0.75eV) materials. The > 35% efficiency is calculated under AM0, and the thickness of each layer is adjusted to equalize the short circuit current. We also experimentally fabricated a 1.0eV cell and studied its characteristics.