Bevel Edge Treatment for Reduction of Defect Density by Plasma Etch Processes Applied in Silicon Trench Technologies

摘要

Plasma etch processes in combination with additional process steps in the standard process flow have been developed and implemented in the manufacturing process for semiconductor products utilizing trench technology for successful defect density reduction, The developed methods have resulted in a sustainable reduction of defect density patterns mainly resulting from the formation of Si needles at the wafer edge during single crystal silicon trench etching.