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Quantitative Investigation of the Chemical Shrinkage Stress in Flip Chip using a 3D Moire Interferometry System

机译:3D Moire干扰系统的倒装芯片化学收缩应力的定量研究

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Thermo-mechanical reliability is a key issue of IC packaging. In this paper, the chemical shrinkage stress caused by the underfill curing is quantitatively investigated: DSC test result provides the basis for the determination of temperature profile for the curing of underfill. The 3D deformation of the flip chip during the underfill curing process is measured with 3D Moire interferometry system. Also a simple theoretical model is set up for this problem, DMA test provide the necessary parameters for this model. The experimental and theoretical results agree well with each other, both results show that the chemical shrinkage stress is fairly small when compared with the thermal residual stress, so this part of residual stress can be neglected in the commonly used finite element analysis (FEA) model.
机译:热电机可靠性是IC包装的关键问题。在本文中,定量研究了由底部填充固化引起的化学收缩应力:DSC试验结果为确定底部填埋的固化的温度曲线提供了基础。用3D莫尔干涉测量系统测量底部填充固化过程中倒装芯片的3D变形。此外,还为此问题设置了一个简单的理论模型,DMA测试为此模型提供了必要的参数。实验和理论结果彼此吻合良好,结果表明,与热残余应力相比,化学收缩应力相当小,因此在常用的有限元分析(FEA)模型中可以忽略该部分的残余应力。

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