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A study on chemical mechanical polishing of polymer-based materials for advanced BEOL interconnections

机译:高级BEOL互连聚合物基材料的化学机械抛光研究

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In this paper, a study of CMP behaviors on three different kind of aromatic polymers is presented. The removal mechanism on the elastic polymer-based materials was found to be different from that of metal or oxide. Polymer is actually scrapped away instead of polishing and Preston's equation is not followed. Therefore, down force dominates the removal of polymer from the sub-layer. On the other hand, oxide removal rate is proportional to PV product. In order to remove polymer and to minimize the loss on sub-layer, such as oxide as a typical example, a recipe with low PV product was developed to achieve high selectivity between polymer and sub-layer. The results show that the low PV recipe can remove polymer efficiently as well as the sub-layer loss is minimized. A new process (GFP) utilizing this polymer CMP approach to get a better process margin is also briefly described in this study.
机译:本文介绍了三种不同种类芳族聚合物上CMP行为的研究。发现弹性聚合物基材料上的去除机制与金属或氧化物的材料不同。实际上是垃圾的聚合物而不是抛光,并且不遵循普雷斯顿的等式。因此,向下的力占据来自子层的去除聚合物。另一方面,氧化物去除速率与PV产品成比例。为了除去聚合物并最小化诸如氧化物作为典型实例的子层的损失,开发了具有低PV产物的配方以在聚合物和子层之间实现高选择性。结果表明,低PV配方可以有效地除去聚合物以及亚层损耗最小化。在本研究中还简要介绍了利用该聚合物CMP方法获得更好的过程裕度的新工艺(GFP)。

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