Silicon micromechanical structures fabricated by electrochemical process

摘要

Silicon (Si) micromechanical structures were fabricated by means of sacrificial layers defined with porous silicon (PS) and masked by hydrogen ion implantation with adequate thermal annealing. The fabrication process to remove the PS layers with diluted KOH at room temperature does not cause damage in remaining Si microstructures which have less than 1 /spl mu/m thickness controlled by the anodization time.