Spontaneous emission control of silicon nanocrystals by silicon three-dimensional photonic crystal structure fabricated by self-aligned two-directional electrochemical etching method

摘要

A silicon three-dimensional photonic crystal (3DPC) structure has been fabricated using a self-aligned, two-directional electrochemical etching method. The spectral component of the photoluminescence (PL) for silicon nanocrystals deposited on the 3DPC structures increase at 750nm and slightly decrease at 800 nm. Time-resolved PL measurements reveal that the radiative recombination lifetime of the silicon nanocrystals on 3DPC structures decreases at 750 nm and increases at 800 nm compared to those on a silicon substrate without 3DPC structures. We conclude that the spontaneous emission control of silicon nanocrystals has been observed using the 3DPC structures.