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Cobalt oxide thin films prepared by metalorganic chemical vapor deposition from cobalt acetylacetonate

机译:通过丙酸钴的金属化学气相沉积制备的氧化钴薄膜

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Thin films of cobalt oxide have been deposited on various substrates, such as glass, Si(100), SrTiO_3(100), and LaAlO_3(100), by low pressure metalorganic chemical vapor deposition (MOCVD) using cobalt(II) acetylacetonate as the precursor. Films obtained in the temperature range 400-600°C were uniform and highly crystalline having Co_3O_4 phase as revealed by x-ray diffraction. Under similar conditions of growth, highly oriented thin films of cobalt oxide grow on SrTiO_3(100) and LaAlO_3(100). The microstructure and the surface morphology of cobalt oxide films on glass, Si(100) and single crystalline substrates, SrTiO_3(100) and LaAlO_3(100) were studied by scanning electron microscopy. Optical properties of the films were studied by uv-visible-near IR spectrophotometry.
机译:通过低压金属化学气相沉积(MOCVD)作为乙酰丙酮,已经沉积在各种基材上,例如玻璃,Si(100),SrTiO_3(100)和LaAlO_3(100)的薄膜。前体。在400-600℃的温度范围内获得的薄膜是均匀的并且具有CO_3O_4相的高度结晶,如X射线衍射所揭示的。在类似的生长条件下,高度取向的钴氧化物薄膜在SRTiO_3(100)和LaAlO_3(100)上生长。通过扫描电子显微镜研究了玻璃,Si(100)和单晶基板上的氧化钴膜,SrTiO_3(100)和LaAlO_3(100)的微观结构和表面形态。通过UV可见的IR分光光度法研究薄膜的光学性质。

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