Properties of Au/Pb(Zr_(0.52)Ti_(0.48))O_3/ Bi_4Ti_3O_(12)/p-Si Ferroelectric Memory Diodes

摘要

A ferroelectric memory diodes that consists of Au/Pb(Zr_(0.52)Ti_(0.48)O_3/Bi_4/Ti_3O_(12)/p-Si multilayer configuration was fabricated by pulsed laser deposition (PLD) technique. The ferroelectric properties and the electrical characteristics of the ferroelectric film system were investigated. The polarization-voltage curve of Pb(Zr_(0.52)Ti_(0.48)O_3/Bi_4Ti_3O_(12) thin films system had an asymmetry hysteresis loop with P_T=20μC/cm~2 and E_C=48 kV/cm, and the decay in remnant polarization was only 10% after 10~9 switching cycles. The C-V curve and the I-V curve showed memory effects derived from the ferroelectric polarization of PZT/BIT films. The current density was 6.7X10~(-8) A/cm~2 at a voltage of +4V, and the conductivity behavior is discussed. The results suggested that the growth of the BIT ferroelectric layer is helpful to good ferroelectric properties, fatigue and capacitance retention characteristics.