首页> 外文会议>International conference on single crystal growth and heat mass transfer >INFLUENCE OF VARYING CRYSTAL GROWTH CONDITIONS ON THE BEHAVIOR OF DOPANT DISTRIBUTION FOR AHP GROWTH OF Ge CRYSTALS
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INFLUENCE OF VARYING CRYSTAL GROWTH CONDITIONS ON THE BEHAVIOR OF DOPANT DISTRIBUTION FOR AHP GROWTH OF Ge CRYSTALS

机译:不同晶体生长条件对Ge晶体AHP生长掺杂剂分布行为的影响

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摘要

The character of changing of crystallization conditions and the opportunity to control crystallization parameters under variation of the regime for germanium crystal growth by the AHP method were investigated. The influence of variations of the crystal pulling rate and temperature gradient at the solid-liquid interface was studied. The opportunity to apply the simplified one-dimensional models for the description of experimental results under non-stationary conditions of AHP crystallization is discussed.
机译:研究了通过AHP方法改变结晶条件的变化和控制结晶参数的机会,通过AHP方法进行锗晶体生长的变化。研究了晶体拉伸速率和温度梯度在固液界面处的影响的影响。讨论了在AHP结晶的非静止条件下应用用于描述实验结果的简化一维模型的机会。

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