Selective MBE Growth of InGaAs Quantum Wire-Dot Coupled Structures with Controlled Double-Barrier Potential Profiles

摘要

Selective MBE growth of InGaAs quantum wire-dot (QWR-QD) coupled structures was investigated in view of application to large-scale integration of single electron transistors. A particular attention was paid to establish growth conditions for precisely controlling the double-barrier potential profiles. The minimum barrier width of 85 nm and the maximum barrier height of 140 meV were achieved in a controlled fashion. The effective sizes of the InGaAs QWRs and QDs were also controlled by the growth conditions and could be reduced down to a few 10 nm range.