ilicon carbide (SiC) is an attractive material for energy-saving electronics and optoelectronics applications, especially in high power and high temperature [1]. Transformation among SiC polytypes may occur in some cases [2,3], but still lacking of sufficient understanding on the mechanism. Here, we report the structural changes caused by N doping, via Raman scattering (RS) and high resolution transmission electron microscopy (HR-TEM), revealing a new polytype transformation in SiC.
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