Evaluation of the diffusion length of microcrystalline silicon by surface photovoltage method

摘要

The carrier diffusion length gives basic information about the quality of microcrystalline silicon, perspective for tandem thin film photovoltage solar cells. We have studied transport by surface photovoltage method (SPV) and we have developed a new SPV evaluation procedure. This procedure allows us to deduce not only the diffusion length, but also depth of the space charge region at the surface and recombination coefficients at both top and bottom interfaces of the film. The space charge region thickness obtained from the SPV mode11ing agree well with the A.C. conductivity measurements.