Rapid Low Temperature Diode Fabrication on P-Type Czochralski Silicon on the Base of Simple Hydrogen Enhanced Thermal Donor formation Processes

摘要

On the base of a controlled hydrogen enhanced thermal donor formation in p-type Czochralski silicon alternative low cost process routes have been developed for the fabrication of diodes with deep p-n junctions. Two process routes for the p-n junction formation are discussed: (i) a one-step-process, where p-n junctions appear just after a H plasma exposure at 400 - 450 °C (typically during 30 - 60 min), and (ii) a two-step-process, where the p-n junction formation requires an annealing at 400 -450 °C (typically for t > 15 min) after a plasma treatment at lower temperatures (for about 1 hour at 250 - 260 °C). Diodes prepared by both process routes are analyzed by spreading resistance probe, I(V) and C(V) measurements. The p-n junctions exhibit the characteristics of linear graded junctions. On a 3 inch wafer more than 500 diodes have been fabricated by the 2-step-process. These diodes can be used for a mapping of the wafer properties.