Similarity and difference: damage in silicon caused by indentation, scratching, grinding and polishing

摘要

The similarity and difference in subsurface structure of monocrystalline silicon after indentation, scratching, grinding and polishing have been studied with the aid of the cross-section view technique and transmission electron microscopy. It has been found that all the processes bring about phase transformation. However, the type and extent of phase transformation and the generation of dislocations or planar defects under the transformation zone depend on the type of processes. It was also shown that microcracks are initiated at the sites of defect or dislocation intersection. The principle of the similarity and difference in subsurface structure is discussed by considering the stress and temperature fields induced by individual finishing processes.