LS MPP Microprocessor Design for I_DDQ Testability

摘要

I_DDQ testing is an effective method for detecting CMOS various defects. However, the applicability of this technique requires careful examination. The basic principle of design for I_DDQ testability is to eliminate high current states from the design. If there is high background current during the I_DDQ test, defects can be masked or good chips can be marked as bad. In this paper, firstly, we analyze the circuit which cause high current states in LS MPP microprocessor, then we given some solutions to eliminate high current states in the design.