Growth of silicon carbide ingots by the modified Lely method with 'in situ' sublimation etching

摘要

6H-SiC single crystal ingots up to 1 inch in diameter with (10~4-10~5) cm~(-2) etch pit densities have been grown by the Modified Lely Method using "in situ" sublimation etching. It is shown that by this way it is possible to improve the quality of the seed-ingot interface and to decrease the density of pinholes and dislocations.