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Lithography driven layout design

机译:光刻驱动布局设计

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A lithography driven layout (LDL) design approach is presented. The approach adds upon the conventional layout optimisation criterions to include the effects of lithographic complexity of the future IC technologies. We analyse the various tradeoffs between the design and lithographic requirements for the IC layouts. Based on this, various LDL design rules are identified that leads to a good compromise between conflicting litho and design requirements. These LDL rules goes beyond the common design for manufacturability rules as they try to reduce the mask cost and extend the lifetime of existing litho-tools. A set of standard-cell layouts designed in 65nm CMOS technology are analysed for their litho-printability. Based on this, LDL design constraints are identified which simplify lithography and have limited impact on design area. The impact of such LDL rules on the performance, cost, and litho printability of IC layouts is presented.
机译:提出了光刻驱动的布局(LDL)设计方法。该方法补充了传统的布局优化标准,包括未来IC技术的光刻复杂性的影响。我们分析了IC布局的设计和光刻要求之间的各种权衡。基于这一点,确定了各种LDL设计规则,导致互相冲突的Litho和设计要求之间的良好折衷。这些LDL规则超出了可制造性规则的常见设计,因为它们试图减少面具成本并延长现有的Litho-Tools的使用寿命。分析了在65nm CMOS技术中设计的一组标准单元布局,以获得其岩石可印刷性。基于此,识别LDL设计约束,简化光刻,对设计区域产生有限的影响。提出了这种LDL规则对IC布局的性能,成本和Litho可印刷性的影响。

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