首页> 外文会议>Electron Devices Meeting, 1978 International >Surface-oriented Schottky barrier diodes for millimeter and submillimeter wave applications
【24h】

Surface-oriented Schottky barrier diodes for millimeter and submillimeter wave applications

机译:适用于毫米波和亚毫米波应用的面向表面的肖特基势垒二极管

获取原文

摘要

The development of surface-oriented Schottky barrier diodes for use as detectors in heterodyne receivers for the microwave, millimeter and submillimeter regions has provided the potential for reliable, low-cost monolithic receivers and the possibility of receiver arrays. Applications range from radio astronomy, plasma diagnostics and spectroscopy to large military imaging systems. The development of surface-oriented devices is traced from the early work in 1968 to the present-day efforts underway in several laboratories. The approaches being considered by the groups that are working to develop surface-oriented device structures are described and contrasted. The utility and characteristics of improved materials growth technology, ion implantation and proton bombardment isolation, which have made the present surface-oriented devices possible, are discussed. Integrated monolithic receivers in which antennas, transmission lines, and other circuit components are integrated with surface-oriented devices on the same GaAs wafer are described.
机译:表面取向的肖特基势垒二极管在微波,毫米和亚毫米区域的外差接收器中用作检测器的发展,为可靠,低成本的整体式接收器提供了潜力,并为接收器阵列提供了可能性。应用范围从射电天文,等离子体诊断和光谱学到大型军事成像系统。面向表面的设备的开发可以追溯到1968年的早期工作,直到如今在多个实验室中正在进行的努力。描述并对比了致力于开发面向表面的器件结构的小组正在考虑的方法。讨论了改进的材料生长技术,离子注入和质子轰击隔离的实用性和特性,这些技术使本发明的表面取向器件成为可能。描述了集成的单片接收器,其中天线,传输线和其他电路组件与同一GaAs晶片上的面向表面的设备集成在一起。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号