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An NMOS Low Drop-out Voltage Regulator with -17dB Wide-Band Power Supply Rejection for SerDes in 22FDX

机译:用于22FDX中的SerDes的具有-17dB宽带电源抑制功能的NMOS低压降稳压器

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A fully on-chip Low Drop Out (LDO) regulator that uses an NMOS output transistor, designed in 22FDX technology, is presented. Proposed LDO capitalizes on technological advantages of back gate bias available in 22FDX to reduce the drop out voltage for regulator and achieve wide band power supply rejection. Charge-pump is used to apply forward back-bias on the NMOS pass device to reduce its threshold voltage down to 0V and enable low drop out regulation. The LDO generates 0.91V output from 1.35V input supply with load current capacity of 15mA. Proposed LDO provides wide band power supply rejection achieving worst case PSR of -17dB across 1Hz-10GHz frequency spectrum essential for SerDes applications. Unity gain bandwidth of >15MHz is achieved along with fast transient response of 63mV peak-to -peak for a current step of 14mA in 100ns.
机译:提出了一种采用NFD输出晶体管的全片上低压降(LDO)稳压器,该稳压器采用22FDX技术设计。拟议的LDO利用22FDX中可用的背栅偏置的技术优势来减少调节器的压差并实现宽带电源抑制。电荷泵用于在NMOS传输器件上施加正向反向偏置,以将其阈值电压降低至0V,并实现低压降稳压。 LDO从1.35V输入电源产生0.91V输出,负载电流容量为15mA。提议的LDO提供宽带电源抑制性能,在SerDes应用必不可少的1Hz-10GHz频谱上实现最坏情况的PSR为-17dB。在100ns的电流为14mA的情况下,可实现> 15MHz的单位增益带宽以及63mV峰峰值的快速瞬态响应。

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