Characterization of analog modules: Reliability analyses of radiation, temperature and variations effects

摘要

Nowadays the uncertainties produced by the combined effect of PVT Variations together with radiation dramatically compromises electronic systems behavior. Usually, radiation effects are studied from a digital point of view, analyzing upset error ratios and their consequences. In this work we redefine the analysis methodology of combined effects of multiple error sources that may affect analog circuits. For this purpose, we use an ad-hoc reliability simulation framework, that comes as a CAD solution for circuit designers which require an alternative method for validating the circuit instead of the time and cost consuming radiation tests. Developed on top of a SPICE-level simulator and a radiation model library which allows not only most CMOS radiation schemes but also predictive technologies and emerging devices to be used during the multi-parameter analysis. We applied the framework and related methodology to the characterization of a bandgap voltage reference, completely identifying its reliability properties when working on a wide temperature range and radiation environments.