One time programming device yield study based on anti-fuse gate oxide breakdown on p-type and n-type substrates

机译：基于对p型和n型衬底的反熔丝栅氧化物击穿的一次性编程器件良率研究

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

A study on the programming yield of one time programmable (OTP) device based on anti-fuse gate oxide breakdown on p-type and n-type substrates is presented. Charge injection into anti-fuse gate oxide from the substrate during OTP programming can alter device characteristics, which impact the OTP programming yield. Experiments showed higher programming yield with increasing anti-fuse gate read current can be obtained with the OTP device based on anti-fuse gate oxide breakdown on n-type substrate compared to p-type substrate due to less electron-hole pair generation.

机译：提出了一种基于反熔丝栅氧化物击穿p型和n型衬底的一次性可编程（OTP）器件的编程产量的方法。在OTP编程过程中，将电荷从衬底注入反熔丝栅氧化物中会改变器件的特性，从而影响OTP编程的良率。实验表明，由于电子空穴对的产生较少，因此与基于p型衬底的n型衬底相比，基于n型衬底上的反熔丝栅氧化物击穿的OTP器件可以提高反熔丝栅读取电流，从而提高编程产量。

著录项

来源
《Integrated Reliability Workshop Final Report, 2005 IEEE International》|2005年|P.3|共1页
会议地点
作者
Mathur; N.; Ahn; Y.; Kouznetov; I.; Jenne; F.; Fulford; J.;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类工业技术;
关键词
MOSFET; semiconductor device breakdown; semiconductor device testing; OTP programming yield; anti-fuse gate oxide breakdown; anti-fuse gate read current; charge injection; device characteristics; electron-hole pair generation; n-type substrates; one time programmi;

机译：MOSFET;半导体器件击穿;半导体器件测试; OTP编程产量;反熔丝栅氧化物击穿;反熔丝栅读取电流;电荷注入;器件特性;电子-空穴对生成; n型衬底;一次编程;

相似文献

外文文献
中文文献
专利

1. Cathode Electron Injection Breakdown Model and Time Dependent Dielectric Breakdown Lifetime Prediction in High-A/Metal Gate Stack p-Type Metal-Oxide-Silicon Field Effect Transistors [J] . Motoyuki Sato, Chihiro Tamura, Kikuo Yamabe, Japanese journal of applied physics . 2008,第5issue1期

机译：高A /金属栅叠层p型金属氧化物硅硅场效应晶体管的阴极电子注入击穿模型和时变介电击穿寿命预测
2. A Study on High Density Gate-Oxide Anti-Fuse PROM Memory Cell Program Features [J] . Keqin Yang, Suge Yue, Shijin Lu MATEC Web of Conferences . 2016,第1期

机译：高密度栅氧化物反熔丝PROM存储单元程序特性研究
3. Charge carrier transport and lifetimes in n-type and p-type phosphorene as 2D device active materials: an ab initio study [J] . Tea E., Hin C. Physical chemistry chemical physics: PCCP . 2016,第32期

机译：作为2D器件活性材料的n型和p型phosphor的电荷载流子传输和寿命：从头算研究
4. One Time Programming Device Yield Study Based On Anti-Fuse Gate Oxide Breakdown on P-type and N-type Substrates [C] . N. Mathur, Y. Ahn, I. Kouznetov, IEEE International Integrated Reliability Workshop . 2005

机译：一种基于防保险丝栅极氧化物击穿对P型和n型基板的一个时间编程装置的产量研究
5. Real-time photoelectron spectroscopy study of the oxidation reaction kinetics on p-type and n-type Si (001) surfaces. [D] . Yu, Zhou. 2016

机译：实时光电子能谱研究在p型和n型Si（001）表面上的氧化反应动力学。
6. Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels [O] . Ngoc Huynh Van, Jae-Hyun Lee, Dongmok Whang, -1

机译：基于Ω型栅极有机铁电P（VDF-TrFE）场效应晶体管的低可编程电压非易失性存储器件使用p型硅纳米线通道
7. Charge carrier transport and lifetimes in n-type and p-type phosphorene as 2D device active materials: an ab initio study [O] . Tea, Eric, Hin, Celine 2016

机译：电荷载流子传输和n型和p型磷的寿命作为2D设备活性材料：从头开始研究

One time programming device yield study based on anti-fuse gate oxide breakdown on p-type and n-type substrates

摘要

著录项

相似文献

相关主题

期刊订阅