首页> 外文会议>Electromagnetic Compatibility Symposium Record, 1968 IEEE >Plasma filled diode operation with plasma created in situ by a low pressure hollow gas discharge
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Plasma filled diode operation with plasma created in situ by a low pressure hollow gas discharge

机译:等离子填充二极管工作,通过低压空心气体放电原位产生等离子体

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Plasma filled diode experiments have been performed at .1 to .5 TW by producing a hollow, Penning like, discharge in low pressure gas inside the A-K gap of an electron beam diode. A low impedance phase was observed whose duration could be controlled by the gas pressure and the initial plasma current. At the end of this low impedance phase, the diode voltage and impedance rise abruptly with observed switching times less than 10 ns.
机译:通过在电子束二极管的A-K间隙内的低压气体中产生中空的Penning状放电,已在0.1至0.5 TW进行了等离子填充二极管实验。观察到低阻抗阶段,其持续时间可以通过气压和初始等离子体电流来控制。在此低阻抗阶段结束时,二极管电压和阻抗突然上升,并且观察到的开关时间小于10 ns。

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